| Original Articles |
|
|
|
|
A Passive Q-Switched Microchip Er/Yb Glass Laser Pumped by Laser Diode |
| SONG Feng1,2;WU Zhao-Hui1,2;LIU Shu-Jing1,2;CAI Hong1,2;TIAN Jian-Guo1,2;ZHANG Guang-Yin1,2;Boris Denker3;Sergei Sverchkov3 |
| 1Photonics Center, Nankai University, Tianjin 300071
2Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457
3General Physics Institute (GPI), Russian Academy of Sciences |
|
| Cite this article: |
|
SONG Feng, WU Zhao-Hui, LIU Shu-Jing et al 2006 Chin. Phys. Lett. 23 1195-1197 |
|
|
|
|
Abstract A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium concentrations of 1wt.% and 21wt.%, respectively. A Co2+:MgAl2O4 slab crystal was used as a passive Q-switcher. Q-switched pulses with repetition frequency of 800Hz, width of 7.4ns, peak power of 2.2kW and average power of 13.3mW were obtained when absorbed pump power was 475mW. A sandwich structure of the Q-switched microchip Er/Yb glass laser was demonstrated, which shows shorter pulse width of 6.8ns. Dependences of pulse duration and repetition frequency on pump power were also investigated.
|
| Keywords:
42.55.Sa
42.55.Xi
42.60.Gd
|
|
|
Published: 01 May 2006
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
