Fabrication of Syringe-Shaped GaN Nanorods

Chin. Phys. Lett.

2006, Vol. 23

Issue (3): 686-688 DOI:

Original Articles

Fabrication of Syringe-Shaped GaN Nanorods

XUE Cheng-Shan;WU Yu-Xin;ZHUANG Hui-Zhao;TIAN De-Heng;LIU Yi-An;HE Jian-Ting;AI Yu-Jie;SUN Li-Li;WANG Fu-Xue;CAO Yu-Ping

Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014

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XUE Cheng-Shan, WU Yu-Xin, ZHUANG Hui-Zhao et al 2006 Chin. Phys. Lett. 23 686-688

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Abstract Syringe-shaped GaN nanorods are synthesized on Si(111) substrates by annealing sputtered Ga₂O₃/BN films under flowing ammonia at temperature of 950°C. Most of the nanorods consist of a main rod and a top needle, looking like a syringe. X-ray diffraction and selected-area electron diffraction confirm that the syringe-shaped nanorods are hexagonal wurtzite GaN. Scanning electron microscopy and high-resolution transmission electron microscopy reveal that these nanorods are as long as several micrometres, with diameters ranging from 100 to 300nm. In addition to the BN intermediate layer, the proper annealing temperature has been demonstrated to be a crucial factor for the growth of syringe-shaped nanorods by this method.

Keywords: 68.65.La 81.05.Ea 81.07.Vb 81.15.Cd

Published: 01 March 2006

PACS:	68.65.La	(Quantum wires (patterned in quantum wells))
	81.05.Ea	(III-V semiconductors)
	81.07.Vb	(Quantum wires)
	81.15.Cd	(Deposition by sputtering)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I3/0686

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	XUE Cheng-Shan
	WU Yu-Xin
	ZHUANG Hui-Zhao
	TIAN De-Heng
	LIU Yi-An
	HE Jian-Ting
	AI Yu-Jie
	SUN Li-Li
	WANG Fu-Xue
	CAO Yu-Ping

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