| Original Articles |
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AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization |
| HAO Zhi-Biao;GUO Tian-Yi;ZHANG Li-Chong;LUO Yi |
| State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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HAO Zhi-Biao, GUO Tian-Yi, ZHANG Li-Chong et al 2006 Chin. Phys. Lett. 23 497-499 |
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Abstract Novel AlGaN/GaN high electron mobility transistors (HEMTs) with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using inductively coupled O2 plasma. X-ray photoelectron spectroscopy measurement reveals that O2 plasma treatment can produce a thin oxidized layer on the AlGaN surface. The insulated-gate devices are realized by plasma oxidization before gate metallization. The reverse gate leakage current of the fabricated HEMT has been reduced in two orders of magnitude, and the cut-off frequency increases from 5.4GHz to 6.5GHz.
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| Keywords:
85.30.Tv
73.40.Qv
82.80.Pv
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Published: 01 February 2006
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| PACS: |
85.30.Tv
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(Field effect devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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