| Original Articles |
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Characteristics of High In-Content InGaN Alloys Grown by MOCVD |
| ZHU Xue-Liang;GUO Li-Wei;YU Nai-Sen;PENG Ming-Zeng;YAN Jian-Feng;GE Bing-Hui;JIA Hai-Qiang;
CHEN Hong;ZHOU Jun-Ming |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,
Beijing 100080
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| Cite this article: |
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ZHU Xue-Liang, GUO Li-Wei, YU Nai-Sen et al 2006 Chin. Phys. Lett. 23 3369-3372 |
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Abstract InN and In0.46Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2V-1s-1 and that of In0.46Ga0.54 is 163 cm2V-1s-1;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
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| Keywords:
81.15.Gh
61.10.Nz
68.37.Ps
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Published: 01 December 2006
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.10.Nz
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68.37.Ps
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(Atomic force microscopy (AFM))
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