| Original Articles |
|
|
|
|
Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition |
| Department of Physics;Lanzhou University;Lanzhou 730000
|
| LI Jun-Shuai, WANG Jin-Xiao, YIN Min, GAO Ping-Qi, HE De-Yan |
|
| Cite this article: |
|
Department of Physics, Lanzhou University, Lanzhou 0000 2006 Chin. Phys. Lett. 23 3338-3340 |
|
|
|
|
Abstract Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (<0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
|
| Keywords:
72.80.Jc
52.80.Yr
|
|
|
Published: 01 December 2006
|
|
| PACS: |
72.80.Jc
|
(Other crystalline inorganic semiconductors)
|
| |
52.80.Yr
|
(Discharges for spectral sources)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
