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Preparation and Microstructure of Tantalum Nitride Thin Film by Cathodic Arc Deposition |
| LI Li1,2;NIU Er-Wu1;LV Guo-Hua1;FENG Wen-Ran1;GU Wei-Chao1;CHEN Guang-Liang1;ZHANG Gu-Ling1;FAN Song-Hua1;LIU Chi-Zi1;YANG Si-Ze1 |
| 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Science College, Civil Aviation University of China, Tianjin 300300 |
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| Cite this article: |
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LI Li, NIU Er-Wu, LV Guo-Hua et al 2006 Chin. Phys. Lett. 23 3018-3021 |
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Abstract Tantalum nitride (TaN) thin films are achieved on Si(111) and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0V and -50V, the amorphous TaN film is obtained. As the bias increases to -100V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred (300) orientation is prepared at a bias of -200V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f7/2 is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures.
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| Keywords:
52.75.-d
68.55.-a
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Published: 01 November 2006
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