| Original Articles |
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Laser Diode Integrated with a Dual-Waveguide Spot-Size Converter by Low-Energy Ion Implantation Quantum Well Intermixing |
| HOU Lian-Ping;ZHU Hong-Liang;ZHOU Fan;WANG Lu-Feng;BIAN Jing;WANG Wei |
| National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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HOU Lian-Ping, ZHU Hong-Liang, ZHOU Fan et al 2005 Chin. Phys. Lett. 22 1684-1686 |
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Abstract A ridge laser diode monolithically integrated with a buried-ridge-structure dual-waveguide spot-size converter operating at 1.58μm is successfully fabricated by means of low-energy ion implantation quantum well intermixing and asymmetric twin waveguide technology. The passive waveguide is optically combined with a laterally tapered active core to control the mode size. The devices emit in a single transverse and quasi single longitudinal mode with a side mode suppression ratio of 40.0dB although no grating is fabricated in the LD region. The threshold current is 50mA. The beam divergence angles in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in 3.0dB coupling loss with a cleaved single-mode optical fibre.
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| Keywords:
42.55.Px
42.70.Hj
42.60.Jf
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Published: 01 July 2005
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.70.Hj
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(Laser materials)
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42.60.Jf
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(Beam characteristics: profile, intensity, and power; spatial pattern formation)
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