Phase Transition of Graphitic-C<suB>3</suB>N<suB>4</suB> under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell

Chin. Phys. Lett.

2005, Vol. 22

Issue (6): 1347-1349 DOI:

Original Articles

Phase Transition of Graphitic-C₃N₄ under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell

HAN Yong-Hao¹;LUO Ji-Feng¹;GAO Chun-Xiao¹;MA Hong-An¹;HAO Ai-Min¹;LI Yan-Chun²;LI Xiao-Dong²;LIU Jing²;LI Ming¹;LIU Hong-Wu¹;ZOU Guang-Tian¹

¹State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 ²Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039

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HAN Yong-Hao, LUO Ji-Feng, GAO Chun-Xiao et al 2005 Chin. Phys. Lett. 22 1347-1349

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Abstract In situ} resistance measurement of Graphitic-C₃N₄ has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30GPa, three abnormal resistance changes can be found at room temperature and two are found at 77K. The abnormal resistance dropped at 5GPa is close to the phase transition pressure from the P6m2 structure to the p structure predicted by Lowther et al. [Phys. Rev. B 59 (1999) 11683] Another abnormal change of resistance at 12GPa is related to the phase transition from g-C₃N₄ to cubic-C₃N₄ [Teter and Hemley, Science 271 (1996) 53].

Keywords: 07.35.+k 07.50.-e 61.18.-j 64.60.-i 72.20.-i

Published: 01 June 2005

PACS:	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)
	07.50.-e	(Electrical and electronic instruments and components)
	61.18.-j
	64.60.-i	(General studies of phase transitions)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I6/01347

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	HAN Yong-Hao
	LUO Ji-Feng
	GAO Chun-Xiao
	MA Hong-An
	HAO Ai-Min
	LI Yan-Chun
	LI Xiao-Dong
	LIU Jing
	LI Ming
	LIU Hong-Wu
	ZOU Guang-Tian

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