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Residual Stress on Surface and Cross-section of Porous Silicon Studied by Micro-Raman Spectroscopy |
| LEI Zhen-Kun1,2;KANG Yi-Lan2;CEN Hao2;HU Ming3;QIU Yu2 |
| 1Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024
2Department of Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072
3Department of Electronic Science and Technology, School of Electronic Information Engineering, Tianjin University, Tianjin 300072 |
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| Cite this article: |
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LEI Zhen-Kun, KANG Yi-Lan, CEN Hao et al 2005 Chin. Phys. Lett. 22 984-986 |
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Abstract Surface and cross-sectional residual stresses of electrochemical etching porous silicon are investigated quantitatively by micro-Raman spectroscopy. The results reveal that a larger tensile residual stress exists on the surface and increase linearly with the porosity. On the other hand, across the depth direction perpendicular to the surface, the tensile residual stress decreases gradually from the surface to regions near the interface between the porous silicon layer and the Si substrate. However, a compressive stress appears at the interface near to the Si substrate for balancing with the tensile stress in the porous silicon layer. The cross-sectional residual stress profile is due to the porosity and lattice mismatch gradients existing in the cross-section and influencing each other. Furthermore, the presented residual stresses of the porous silicon have a close relation with its microstructure.
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| Keywords:
81.05.Rm
81.70.Fy
78.30.Am
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Published: 01 April 2005
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| PACS: |
81.05.Rm
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(Porous materials; granular materials)
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81.70.Fy
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(Nondestructive testing: optical methods)
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78.30.Am
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(Elemental semiconductors and insulators)
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