In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure

Chin. Phys. Lett.

2005, Vol. 22

Issue (4): 927-930 DOI:

Original Articles

In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure

HAN Yong-Hao¹;LUO Ji-Feng¹;HAO Ai-Min¹;GAO Chun-Xiao¹;XIE Hong-Sen²;QU Sheng-Chun³;LIU Hong-Wu¹;ZOU Guang-Tian¹

¹State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012 ²Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002 ³Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min et al 2005 Chin. Phys. Lett. 22 927-930

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Abstract An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

Keywords: 72.20.-i 64.60.-i 07.35.+k 81.05.Dz

Published: 01 April 2005

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	64.60.-i	(General studies of phase transitions)
	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)
	81.05.Dz	(II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I4/0927

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	HAN Yong-Hao
	LUO Ji-Feng
	HAO Ai-Min
	GAO Chun-Xiao
	XIE Hong-Sen
	QU Sheng-Chun
	LIU Hong-Wu
	ZOU Guang-Tian

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