Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

Chin. Phys. Lett.

2005, Vol. 22

Issue (1): 233-235 DOI:

Original Articles

Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

WU Zhi-Jun¹;CHEN Shu-Fen¹;YANG Hui-Shan^1,2;ZHAO Yi¹;LI Chuan-Nan¹;HOU Jing-Ying¹;LIU Shi-Yong¹

¹National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023 ²Department of Physics, Quanzhou Normal College, Quanzhou 362000

Cite this article:

WU Zhi-Jun, CHEN Shu-Fen, YANG Hui-Shan et al 2005 Chin. Phys. Lett. 22 233-235

Download: PDF(389KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract We have fabricated a top-emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3V with the luminance of 8.4cd/m². The maximum current efficiency is 1.3cd/A at 6V and the luminance reaches 14790cd/m² at 14V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.

Keywords: 78.60.Fi 78.66.Qn 85.60.Jb

Published: 01 January 2005

PACS:	78.60.Fi	(Electroluminescence)
	78.66.Qn	(Polymers; organic compounds)
	85.60.Jb	(Light-emitting devices)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I1/0233

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WU Zhi-Jun
	CHEN Shu-Fen
	YANG Hui-Shan
	ZHAO Yi
	LI Chuan-Nan
	HOU Jing-Ying
	LIU Shi-Yong

Related articles from Frontiers Journals

[1]	ZENG Chang, ZHANG Shu-Ming, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN**[J]. Chin. Phys. Lett., 2012, 29(1): 233-235
[2]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 233-235
[3]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 233-235
[4]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 233-235
[5]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 233-235
[6]	CHEN Jun, FAN Guang-Han, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer**[J]. Chin. Phys. Lett., 2011, 28(12): 233-235
[7]	WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED**[J]. Chin. Phys. Lett., 2011, 28(11): 233-235
[8]	FENG Lie-Feng, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(10): 233-235
[9]	SUN Jing, ZHAO Yi-Kun, WANG Xin-Qiang, REN Quan, CHEN Jing-Wei, ZHANG Guang-Hui, XU Dong, WANG He-Zhou . Nonlinear Optical Studies of [(C₄H₉)₄N][Ni(dmit)₂] by Z-Scan Technique**[J]. Chin. Phys. Lett., 2011, 28(10): 233-235
[10]	LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 233-235
[11]	DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 233-235
[12]	QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 233-235
[13]	WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 233-235
[14]	LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan. Electroluminescence from Multilayered Diamond/CeF₃/SiO₂ Films[J]. Chin. Phys. Lett., 2010, 27(4): 233-235
[15]	PAN Yao-Bo, HAO Mao-Sheng, QI Sheng-Li, FANG Hao, ZHANG Guo-Yi. Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes[J]. Chin. Phys. Lett., 2010, 27(3): 233-235

Viewed

Full text

Abstract