Room-Temperature Growth of Al Films on Si(111)-7×7 Surface

Chin. Phys. Lett.

2004, Vol. 21

Issue (8): 1608-1611 DOI:

Original Articles

Room-Temperature Growth of Al Films on Si(111)-7×7 Surface

LIU Hong;ZHANG Yan-Feng;WANG De-Yong;JIA Jin-Feng;XUE Qi-Kun

State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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LIU Hong, ZHANG Yan-Feng, WANG De-Yong et al 2004 Chin. Phys. Lett. 21 1608-1611

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Abstract Reflection high energy electron diffraction and scanning tunnelling microscopy (STM) are used to investigate the structure and morphology of Al films deposited on Si(111)-7×7 surface at room temperature. The films are polycrystalline, made up of (100) and (111) oriented islands, which primarily result from the interface elastic effect and free surface energies of the Al (100) and (111) surfaces.

Keywords: 68.35.-p 68.36.Md 68.37.Ef 61.14.Hg

Published: 01 August 2004

PACS:	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)
	68.36.Md
	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	61.14.Hg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I8/01608

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