Preparation and Properties of GaN Films on GaAs Substrates

Chin. Phys. Lett.

2004, Vol. 21

Issue (5): 955-957 DOI:

Original Articles

Preparation and Properties of GaN Films on GaAs Substrates

YANG Ying-Ge¹;MA Hong-Lei²;MA Jin²;ZHANG Ya-Fei¹

¹Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Research Institute for Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030 ²School of Physics and Microelectronics, Shandong University, Jinan 250100

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YANG Ying-Ge, MA Hong-Lei, MA Jin et al 2004 Chin. Phys. Lett. 21 955-957

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Abstract Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band.

Keywords: 78.55.Cr 74.25.Gz 68.55.-a

Published: 01 May 2004

PACS:	78.55.Cr	(III-V semiconductors)
	74.25.Gz	(Optical properties)
	68.55.-a	(Thin film structure and morphology)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I5/0955

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	MA Hong-Lei
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