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Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology |
| ZHEN Wan-Bao1.2;LIU Wei-Li1;SONG Zhi-Tang1;FENG Song-Lin1;ZHU Shi-Fu2;ZHAO Bei-Jun2 |
| 1The Research Centre of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Department of Materials Science and Engineering, Sichuan University, Chendu 610064 |
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| Cite this article: |
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ZHEN Wan-Bao., LIU Wei-Li, SONG Zhi-Tang et al 2004 Chin. Phys. Lett. 21 2540-2542 |
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Abstract A single crystal Si thin film on a glass substrate has been obtained successfully by hydrophilic fusion bonding and the smart-cut technology. Tensile strength testing shows that the bonded interface has strong adhesion and the bonding strength is about 8.7MPa. Crystallinity and microstructure of the samples have been characterized by transmission electron microscopy (TEM). Electrical properties have also been investigated by Hall measurements and four-point probe. The mobility of the transferred Si layer on glass is about 122cm2/V.s. The results show that the single-crystal silicon layer transferred onto glass by direct bonding keeps good quality for the applications of integrated circuits, transducers, and flat panel display.
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| Keywords:
81.05.-t
73.61.Cw
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Published: 01 December 2004
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| PACS: |
81.05.-t
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(Specific materials: fabrication, treatment, testing, and analysis)
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73.61.Cw
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(Elemental semiconductors)
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