Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures

Chin. Phys. Lett.

2004, Vol. 21

Issue (1): 170-172 DOI:

Original Articles

Surface States in the Al_xGa_1-xN Barrier in Al_xGa_1-xN/GaN Heterostructures

LIU Jie;SHEN Bo;WANG Mao-Jun;ZHOU Yu-Gang;CHEN Dun-Jun;ZHANG Rong;SHI Yi;ZHENG You-Dou

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093

Cite this article:

LIU Jie, SHEN Bo, WANG Mao-Jun et al 2004 Chin. Phys. Lett. 21 170-172

Download: PDF(334KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al_0.22Ga_0.78N/GaN heterostructures to investigate the characteristics of the surface states in the Al_xGa_1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the Al_xGa_1-xN barrier. The density of the surface states is about 10¹²cm^-2eV^-1, and the time constant is about 1 μs. It is found that an insulating layer (Si₃N₄) between the metal contact and the surface of Al_xGa_1-xN can passivate the surface states effectively.

Keywords: 73.30.+y 81.65.-b

Published: 01 January 2004

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	81.65.-b	(Surface treatments)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I1/0170

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	LIU Jie
	SHEN Bo
	WANG Mao-Jun
	ZHOU Yu-Gang
	CHEN Dun-Jun
	ZHANG Rong
	SHI Yi
	ZHENG You-Dou

Related articles from Frontiers Journals

[1]	C. K. Sumesh, K. D. Patel, V. M. Pathak, R. Srivastav . Current Transport in Copper Schottky Contacts to a−Plane/ c−Plane n-Type MoSe₂**[J]. Chin. Phys. Lett., 2011, 28(8): 170-172
[2]	CHEN Cong, NING Ting-Yin, WANG Can, ZHOU Yue-Liang, ZHANG Dong-Xiang, WANG Pei, MING Hai, YANG Guo-Zhen . Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu₃Ti₄O₁₂ and Pt**[J]. Chin. Phys. Lett., 2011, 28(8): 170-172
[3]	ZOU Yang, CAI Jie, WAN Ming-Zhen, LV Peng, GUAN Qing-Feng . Formation Mechanism of Micropores on the Surface of Pure Aluminum Induced by High-Current Pulsed Electron Beam Irradiation**[J]. Chin. Phys. Lett., 2011, 28(11): 170-172
[4]	CHENG Xiao-Man, , HU Zi-Yang, , WU Ren-Lei, , WANG Zhong-Qiang, , YIN Shou-Gen,. Fabrication and Characterization of C₆₀-Based Organic Schottky Diodes[J]. Chin. Phys. Lett., 2010, 27(1): 170-172
[5]	AN Xia, FAN Chun-Hui, HUANG Ru, ZHANG Xing. Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique[J]. Chin. Phys. Lett., 2009, 26(8): 170-172
[6]	G. Güler, Ö, . Güllü, S. Karatas, Ö, . F. Bakkaloglu. *Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V* and C-V Measurements**[J]. Chin. Phys. Lett., 2009, 26(6): 170-172
[7]	GENG Li, MAGYARI-KOPE Blanka, ZHANG Zhi-Yong, NISHI Yoshio. Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi₂/Si Interface[J]. Chin. Phys. Lett., 2009, 26(3): 170-172
[8]	HU Zi-Yang, CHENG Xiao-Man, , WU Ren-Lei, WANG Zhong-Qiang, YIN Shou-Gen,. Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces[J]. Chin. Phys. Lett., 2009, 26(3): 170-172
[9]	ZHU Ji-Hong, ZHANG Shu-Ming, SUN Xian, ZHAO De-Gang, ZHU Jian-Jun, LIU Zong-Shun, JIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, YANG Hui,. Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes[J]. Chin. Phys. Lett., 2008, 25(9): 170-172
[10]	ZHONG Min, SONG Zhi-Tang, LIU Bo, FENG Song-Lin, CHEN Bomy. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device[J]. Chin. Phys. Lett., 2008, 25(2): 170-172
[11]	CHEN Jie-Fei, XIAO Wen-Jia, LI Da, YANG Yang-Yi, HE Zhen-Hui,. Superhydrophobicity of LaMnO₃ Coatings with Hierarchical Microstructures[J]. Chin. Phys. Lett., 2008, 25(2): 170-172
[12]	ZHOU Mi, CHEN Tao, TAN Jing-Jing, RU Guo-Ping, JIANG Yu-Long, LIU Ran, QU Xin-Ping. Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films[J]. Chin. Phys. Lett., 2007, 24(5): 170-172
[13]	SANG Li-Wen, QIN Zhi-Xin, CEN Long-Bin, CHEN Zhi-Zhong, YANG Zhi-Jian, SHEN Bo, ZHANG Guo-Yi. Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts[J]. Chin. Phys. Lett., 2007, 24(10): 170-172
[14]	LIU Qi-Bin, SONG Zhi-Tang, ZHANG Kai-Liang, WANG Liang-Yong, FENG Song-Lin, CHEN Bomy. Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method[J]. Chin. Phys. Lett., 2006, 23(8): 170-172
[15]	WANG Chun-Ming, WANG Jin-Feng, SU Wen-Bin. Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics[J]. Chin. Phys. Lett., 2006, 23(3): 170-172

Viewed

Full text

Abstract