| Original Articles |
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Self-Organized InAs Quantum Wires on GaAs (331)A Substrates |
| GONG Zheng; FANG Zhi-Dan; MIAO Zhen-Hua;NIU Zhi-Chuan;FENG Song-Lin |
| National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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GONG Zheng, FANG Zhi-Dan, MIAO Zhen-Hua et al 2003 Chin. Phys. Lett. 20 1819-1821 |
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Abstract Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7. nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.
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| Keywords:
68.55.Jk
81.10.Aj
81.15.Hi
07.79.Lh
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Published: 01 October 2003
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| PACS: |
68.55.Jk
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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07.79.Lh
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(Atomic force microscopes)
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