| Original Articles |
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Colossal Magnetoresistive p-n Junctions of Te-Doped LaMnO3/Nb-doped SrTiO3 |
| LÜ Hui-Bin;DAI Shou-Yu;CHEN Zheng-Hao;LIU Li-feng;GUO Hai-Zhong;XIANG Wen-Feng;FEI Yi-Yan;HE Meng;ZHOU Yue-Liang;YANG Guo-Zhen |
| Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Cite this article: |
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LÜ, Hui-Bin, DAI Shou-Yu et al 2003 Chin. Phys. Lett. 20 137-140 |
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Abstract We have fabricated colossal magnetoresistive (CMR) p-n junctions made of Te-doped LaMnO3 and Nb-doped SrTiO3 with laser molecular beam epitaxy. The I-V characteristics of the La0.9Te0.1MnO3/SrNb0.01Ti0.99O3 p-n junctions as a function of applied magnetic field (0-5 T) were experimentally studied in the temperature range 77-300 K. The results indicate that the p-n junction exhibited the CMR behaviour. The magnetoresistance (MR) is positive at 220 K and 300 K, while it displays a negative MR at 77 K. For a positive bias, the MR ratios (ΔR/R0, ΔR = RH-R0) are 7.5% at 0.1 T and 18% at 5 T for 300 K, 5% at 0.1 T and 33% at 5 T for 220 K, -14% at 0.1 T and -71% at 5 T for 77 K. For a negative bias, the MR ratios are 6.3% at 0.1 T and 10.8% at 3 T for 300 K, 5.1% at 0.T and 15% at 3 T for 220 K, -19% at 0.1 T and -72% at 5 T for 77 K. The CMR behaviour of the p-n junction is different from those of the LaMnO3 compound family.
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| Keywords:
75.30.Vn
75.70.Pa
73.40.Lq
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Published: 01 January 2003
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