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Influence of Mass Transport on Formation of Si-Nanostructures |
| ZHANG Xiao-Na;LI Chao-Rong;ZHANG Ze |
| Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Cite this article: |
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ZHANG Xiao-Na, LI Chao-Rong, ZHANG Ze 2003 Chin. Phys. Lett. 20 111-113 |
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Abstract Nanowires-like, condyloid-like and flakes of Si-nanostructures were synthesized by thermal evaporation under different mass transport conditions by changing the ambient pressure. The structural analysis shows that a higher mass transport rate is not favorite for the formation of fine single crystalline nanowires when the substrate placed closely to the thermal vapor source. The higher mass transport rate can induce a lower Si partial pressure near the source and hence results in a lower supersaturation near the substrate. Experimental results reveal that the formation of Si-nanowires is not controlled by mass transport but by surface process. The driving force on the surface is the key factor for the formation of well-crystallized nanowires.
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| Keywords:
68.65.+g
81.10.-h
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Published: 01 January 2003
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| PACS: |
68.65.+g
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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