Electrical Conductivity of Synthetic Quartz Crystals at High Temperature and Pressure from Complex Impedance Measurements

Chin. Phys. Lett.

2002, Vol. 19

Issue (8): 1211-1213 DOI:

Original Articles

Electrical Conductivity of Synthetic Quartz Crystals at High Temperature and Pressure from Complex Impedance Measurements

WANG Duo-Jun^1,2;LI He-Ping¹;LIU Cong-Qiang¹;YI Li¹;DING Dong-Ye¹, SU Gen-Li¹;ZHANG Wei-Gang³

¹Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002 ²Graduate School of Chinese Academy of Sciences, Beijing 100039 ³Department of Earth Science, Oil University, Beijing 102200

Cite this article:

WANG Duo-Jun, LI He-Ping, LIU Cong-Qiang et al 2002 Chin. Phys. Lett. 19 1211-1213

Download: PDF(417KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract An electrical conductivity measurement system under high-pressure conditions with a multi-anvil high-pressure apparatus by an ac complex impedance method was set up. With this system, we have successfully measured the electrical conductivity of synthetic quartz under pressure up to approximately 1.0 GPa in the temperature range 661-987 K. The values of electrical conductivity decrease with the increasing pressure and increase with the increasing temperature. The activation enthalpies for the α-quartz crystals are 1.10-1.28 eV. The electrical conductivity of α-quartz is ionic, with Na ions moving in channels parallel to the c-axis being the predominant current carrier.

Keywords: 91.60.Pn 91.60.Gf 91.60.Ed 73.20.Hb

Published: 01 August 2002

PACS:	91.60.Pn	(Magnetic and electrical properties)
	91.60.Gf	(High-pressure behavior)
	91.60.Ed	(Crystal structure and defects, microstructure)
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I8/01211

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WANG Duo-Jun
	LI He-Ping
	LIU Cong-Qiang
	YI Li
	DING Dong-Ye
	SU Gen-Li
	ZHANG Wei-Gang

Related articles from Frontiers Journals

[1]	FAN Da-Wei, WEI Shu-Yi, LIU Jing, LI Yan-Chun, XIE Hong-Sen . High Pressure X-Ray Diffraction Study of a Grossular–Andradite Solid Solution and the Bulk Modulus Variation along this Solid Solution**[J]. Chin. Phys. Lett., 2011, 28(7): 1211-1213
[2]	U. Yesilgul, F. Ungan, E. Kasapoglu, H. Sari, I. Sö, kmen . Effects of an Intense Laser Field and Hydrostatic Pressure on the Intersubband Transitions and Binding Energy of Shallow Donor Impurities in a Quantum Well**[J]. Chin. Phys. Lett., 2011, 28(7): 1211-1213
[3]	WANG Jin, WANG Hui, ZHAO Wang, MA Yan, LI Wan-Cheng, XIA Xiao-Chuan, SHI Zhi-Feng, ZHAO Long, ZHANG Bao-Lin, DONG Xin, DU Guo-Tong . Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(7): 1211-1213
[4]	SUN Hong-Cheng, XU Jun, LIU Yu, MU Wei-Wei, XU Wei, LI Wei, CHEN Kun-Ji . Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO₂ Multilayers at Room Temperature**[J]. Chin. Phys. Lett., 2011, 28(6): 1211-1213
[5]	WANG Duo-Jun, LIU Zai-Yang, YI Li, SHI Bao-Ping . Electrical Properties of Hydrous Forsterite Derived from First-Principles Calculations**[J]. Chin. Phys. Lett., 2011, 28(5): 1211-1213
[6]	JIN Dan, Ateeq ur Rehman, QIAN Hui-Qin, JIANG Li-Zhen, ZHANG Han-Jie, LI Hai-Yang, HE Pi-Mo, BAO Shi-Ning . Geometric and Electronic Structures at the Interface between Iron Phthalocyanine and Si (110)[J]. Chin. Phys. Lett., 2011, 28(11): 1211-1213
[7]	WANG Hua, ZHANG Jian, YANG Fan, WANG Kai, SHEN Si-Le, LIU Bing-Bing, ZOU Bo, ZOU Guang-Tian . Analysis on the DNA Fingerprinting of Aspergillus Oryzae Mutant Induced by High Hydrostatic Pressure[J]. Chin. Phys. Lett., 2011, 28(1): 1211-1213
[8]	XU Zheng-Yu, QIN Zhi-Xin, SANG Li-Wen, ZHANG Yan-Zhao, SHEN Bo, ZHANG Guo-Yi, ZHAO Lan, ZHANG Xiang-Feng, CHENG Cai-Jing, SUN Wei-Guo. Effect of Indium Ambient on Electrical Properties of Mg-Doped Al_xGa_1-xN**[J]. Chin. Phys. Lett., 2010, 27(12): 1211-1213
[9]	HE Man-Chao, FANG Zhi-Jie, ZHANG Ping. Theoretical Studies on Defects of Kaolinite in Clays[J]. Chin. Phys. Lett., 2009, 26(5): 1211-1213
[10]	HAN Peng, JIN Kui-Juan, LÜ, Hui-Bin, JIA Jin-Feng, QIU Jie, HU Chun-Lian, YANG Guo-Zhen. Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures[J]. Chin. Phys. Lett., 2009, 26(2): 1211-1213
[11]	LU Lai-Yu, WEI Dong-Qing, CHEN Xiang-Rong, JI Guang-Fu. First-Principles Calculations of Structures and Electronic Properties of Solid Pentaerythritol under Pressure[J]. Chin. Phys. Lett., 2008, 25(9): 1211-1213
[12]	JIANG Li-Ming, WANG Hai-Long, WU Hui-Ting, GONG Qian, FENG Song-Lin. External Electric Field Effect on Hydrogenic Donor Impurity in Zinc-Blende InGaN Quantum Dot[J]. Chin. Phys. Lett., 2008, 25(8): 1211-1213
[13]	A. John Peter, Vemuri Lakshminarayana. Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements[J]. Chin. Phys. Lett., 2008, 25(8): 1211-1213
[14]	WANG Xiang, HUANG Jian, DING Hong-Lin, ZHANG Xian-Gao, YU Lin-Wei, HUANG Xin-Fan, LI Wei, CHEN Kun-Ji. Large Storage Window in a-SiN_x/nc-Si/a-SiN_xSandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application[J]. Chin. Phys. Lett., 2008, 25(7): 1211-1213
[15]	ZHANG Hong, TANG Jin, CHENG Xin-Lu. Structural, Electronic Properties and Chemical Bonding of Borate Li₄CaB₂O₆ under High Pressure: an Ab Initio Investigation[J]. Chin. Phys. Lett., 2008, 25(2): 1211-1213

Viewed

Full text

Abstract