| Original Articles |
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A Silicon-Based Ferroelectric Capacitor for Memory Devices |
| REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian et al 2002 Chin. Phys. Lett. 19 432-433 |
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Abstract We study a silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 capacitor, prepared by an improved sol-gel method. The ferroelectric capacitor, with high remanent polarization of 15μC/cm2 at a coercive field of about 30kV/cm, an ultra-low leakage current density of 0.1nA/cm2, and almost fatigue free properties, It can be used as a promising candidate for ferroelectric memory devices.
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| Keywords:
85.50.+k
77.84.-s
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Published: 01 March 2002
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| PACS: |
85.50.+k
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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