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Determination of the Potential Barrier at the Metal/Oxide Interface in a Specular Spin Valve Structure with Nano-oxide Layers by Using Electron Holography |
| WANG Yan-Guo;SHEN Feng;ZHANG Ze;CAI Jian-Wang;LAI Wu-Yan |
| Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080 |
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| Cite this article: |
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WANG Yan-Guo, SHEN Feng, ZHANG Ze et al 2002 Chin. Phys. Lett. 19 1480-1482 |
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Abstract The local potential distribution in a specular spin valve structure with nano-oxide layers has been mapped by using off-axis electron holography in a field emission gun transmission electron microscope. A potential jump of 3-4V across the metal/oxide interface was detected for the first time. The presence of the potential barrier confirms the formation of the metal/insulator/metal structure, which contributes to increasing mean free path of spin-polarized electrons via the specular reflection of spin-polarized electrons at the metal/oxide interface. It leads to nearly double enhancement of the magnetoresistance ratio from 8% to 15%.
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| Keywords:
61.14.Nm
75.70.Pa
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Published: 01 October 2002
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