| Original Articles |
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High Current Gain In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors with Double Spacers Grown by Gas Source Molecular Beam Epitaxy |
| CHEN Xiao-Jie;CHEN Jian-Xin;CHEN Yi-Qiao;PENG Peng;YANG Quan-Kui;LI Ai-Zhen |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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CHEN Xiao-Jie, CHEN Jian-Xin, CHEN Yi-Qiao et al 2000 Chin. Phys. Lett. 17 915-917 |
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Abstract This paper reports the improved performance of the lattice-matched N-p+-n In0.49Ga0.51P/GaAs heterojunction bipolar transistors(HBTs) with undoped spacers grown by the gas source molecular beam epitaxy. A 600 Å GaAs base doped with beryllium at 3 x 1019cm-3 and a 1000 Å In0.49Ga0.51P emitter doped with silicon at 3 x 1017cm-3 have been grown. On both sides of the base, the 50 Å undoped GaAs spacers were grown. Devices with emitter area of 100 x 100 μm2 were fabricated by using selective wet chemical etching technique. The measured results of HBTs reveal cood junction characteristics, and the common-emitter current gain reaches 320 at the collector current density of 280 A/cm2.
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| Keywords:
81.15.Hi
73.40.Kp
85.30.Pq
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Published: 01 December 2000
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.Pq
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(Bipolar transistors)
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