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Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO2 |
| LIN Xuan-ying1;LIN Kui-xun2;YAO Ruo-he1;SHI Wang-zhou2;LI Mei-ya2;YU Chu-ying1;YU Yun-peng1;LIANG Hou-yun1;XU Yan-ping3 |
| 1Department of Physics,
2Institute of Material Science and Technology, Test Center, Shantou University, Shantou 515063 |
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| Cite this article: |
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LIN Xuan-ying, LIN Kui-xun, YAO Ruo-he et al 1999 Chin. Phys. Lett. 16 670-671 |
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Abstract Nano-crystalline silicon (nc-Si) films embedded in SiO2 exhibited strong visible light luminescence at room temperature. The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized. The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface. Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.
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| Keywords:
61.43.Dq
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Published: 01 September 1999
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| PACS: |
61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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