| Original Articles |
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Suppression of Self-sustained Field Domain Oscillation in GaAs/AlAs Superlattice by Hydrostatic Pressure at Room Temperature |
| WU Jian-qing;LIU Zhen-xing1;JIANG De-sheng;SUN Bao-quan |
| National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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| Cite this article: |
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WU Jian-qing, LIU Zhen-xing, JIANG De-sheng et al 1999 Chin. Phys. Lett. 16 143-145 |
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Abstract The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the 1-V curve. The plateau disappears when the pressure is close to 13.5kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Г point valley, the disappearance of oscillation and the plateau shrinkage before Г - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Г - X barrier height in GaAs/AlAs SL structure.
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| Keywords:
73.40.Gk
73.20.Dx
73.50.Dn
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Published: 01 February 1999
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