| Original Articles |
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Auger Electron Spectroscopy and Rut herford Backscattering-Channeling Study of Silicon Nitride Formation by Low Energy N+2 Ion Implantation |
| CHAI Jian-wei;YANG Guo-hua;PAN Hao-chang;CAO Jian-qing,
ZHU De-zhang;XU Hong-jie |
| Laboratory of Nuclear Analysis Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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CHAI Jian-wei, YANG Guo-hua, PAN Hao-chang et al 1999 Chin. Phys. Lett. 16 120-122 |
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Abstract Direct nitridation of Si (100) surface by low energy N+2 ion beam implantation at room temperature for differention doses and angles of incidence has been investigated by in-situ Auger electron spectroscopy and glancing Rutherford backscattering-channeling (RBS-C) measurements. The results show that with increase of N+2 ion dose the N concentration in the Si surface increases and reaches to a surface stoichiometry close to that of Si3N4. The saturation dose and the thickness of the silicon nitride layer are related to the N+2 ion energy. Complete nitride layer can be formed at incident angles of 0o - 30o. At larger angles the degree of nitridation decreases and no nitride layer could be found at incident angles larger than 54o. The RBS-C results also suggest that a heavy damaged layer beneath the surface nitride layer can be formed due to ion beam implantation.
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| Keywords:
61.80.Jh
61.85.+p
68.55.Ln
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Published: 01 February 1999
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| PACS: |
61.80.Jh
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(Ion radiation effects)
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61.85.+p
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(Channeling phenomena (blocking, energy loss, etc.) ?)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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