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Photovoltaic Effect of ZnO/Si Heterostructure |
| FU Zhu-xi1,2;LIN Bi-xia2;LIAO Gui-hong2 |
| 1Structure Research Laboratory,
2Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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FU Zhu-xi, LIN Bi-xia, LIAO Gui-hong 1999 Chin. Phys. Lett. 16 753-755 |
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Abstract A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated. The current-voltage characteristics under dark or illumination were determined. It is indicated that the sample is likely a semiconductor junction, and this structure generates an obvious photovoltaic effect. Spectral responses of photovoltage, cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the samples. The energy level and the process of electron transition in the ZnO film have also been deduced.
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| Keywords:
72.40.+w
73.40.Lq
73.50.Pz
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Published: 01 October 1999
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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