Electronic Structure of InAs<suB>x</suB>P<suB>1-x</suB>/InP Strained Quantum Wires

Chin. Phys. Lett.

1998, Vol. 15

Issue (8): 594-596 DOI:

Original Articles

Electronic Structure of InAs_xP_1-x/InP Strained Quantum Wires

HE Guo-min;LI Kai-hang;WANG Ren-zhi;ZHENG Yong-mei

Department of Physics, Xiamen University, Xiamen 361005

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HE Guo-min, LI Kai-hang, WANG Ren-zhi et al 1998 Chin. Phys. Lett. 15 594-596

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Abstract The electronic structure of InAs_0.25P_0.75/InP strained quantum wires grown on InP(001) oriented substrates is studied within the framework of effective-mass envelope-function theory. At the Γ point, the electron and valence subband energy levels with and without spin-split-off band, and the absorption spectra are calculated. The effects of strain and spin-split-off band on valence energy levels are presented. The results show that the uppermost valence subband is almost unaffected by the strain induced coupling between the heavy- and light-hole bands and the spin-split-off bands while the other subbands are more markedly affected in the InAs_0.25P_0.75/InP strained quantum wires.

Keywords: 71.55.Eq 71.70.-d 73.20.Dx

Published: 01 August 1998

PACS:	71.55.Eq	(III-V semiconductors)
	71.70.-d	(Level splitting and interactions)
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I8/0594

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	HE Guo-min
	LI Kai-hang
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