Chin. Phys. Lett.  1998, Vol. 15 Issue (5): 373-375    DOI:
Original Articles |
Epitaxial Growth of Bi2Sr2-xLaxCu1O6+δ Thin Films by In-Situ dc Magnetron Sputtering
ZHANG Ying-zi;YANG Duo-gui;LI Lin;ZHAO Bai-ru;JIA Shun-lian;CHEN Hong;WU Fei;CHE Guang-can;ZHAO Zhong-xian
National Laboratory for Superconductivity, Institute of Physics & Centre for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
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ZHANG Ying-zi, YANG Duo-gui, LI Lin et al  1998 Chin. Phys. Lett. 15 373-375
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Abstract Bi2Sr2-xLaxCu1O6+δ (La-2201) thin films were successfully prepared on (100) SrTiO3 and (100) LaAIO3 substrates by in-situ dc-magnetron sputtering process. A series compensated 2201 targets of La3+ substitution contents for Sr2+ were studied for growing 2201 phase thin films. The superconducting zero resistance temperature Tc,0 reached 19K. X-ray diffraction analyses showed that films oriented with c-axis perpendicular to the substrate surface and their lattice parameters are around 2.43-2.46nm. Ф-scan and rocking curve show a good epitaxial growth and crystallisation of the films.
Keywords: 74.62.Dh      74.72.Hs      74.76.Bz     
Published: 01 May 1998
PACS:  74.62.Dh (Effects of crystal defects, doping and substitution)  
  74.72.Hs  
  74.76.Bz  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I5/0373
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ZHANG Ying-zi
YANG Duo-gui
LI Lin
ZHAO Bai-ru
JIA Shun-lian
CHEN Hong
WU Fei
CHE Guang-can
ZHAO Zhong-xian
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