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Influence of Weak Self-Field Effect on Calculated Activation Energy for Superconducting Thin Film |
| XU Xiao-nong;SUN Ai-min;DING Shi-ying;JIN Xin;YAO Xi-xian;YAN Shao-lin1;WEN Hai-hu2 |
| Department of Physics and Center of Advanced Studies in Science and Technology of Microstructures, Nanjing University, Nanjing 210093
1Department of Electronics, Nankai University, Tianjin 300071
2National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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| Cite this article: |
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XU Xiao-nong, SUN Ai-min, DING Shi-ying et al 1997 Chin. Phys. Lett. 14 617-620 |
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Abstract When the applied field Ba = μ0 Ha (Ha > Hp) is perpendicular to the surface of a disk-shaped superconducting thin film with the full penetrated field Hp, the radius R, and the thickness d, a quantitative relation between the average field < B > and the magnetization M is described by < B > = μ0 [Ha + (0.81 d/R) M] for R» d , where the term μ0(0.81 d/R) M also is the average self-field of the film. Combining this relation with the magnetic flux conservation equation and the Arrhenius relation, the effective activation energy is extracted from the experimental magnetization relaxation and the dynamic magnetization relaxation, respectively.
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74.60.Jg
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Published: 01 August 1997
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