Photoemission of the Oxidation of Cerium Overlayers on GaSb(110) Surface

Chin. Phys. Lett.

1997, Vol. 14

Issue (10): 793-797 DOI:

Original Articles

Photoemission of the Oxidation of Cerium Overlayers on GaSb(110) Surface

LIANG Qi;WU Jian-xin;JI Ming-rong;MA Mao-sheng;LIU Xian-ming;ZHANG Yu-heng

Structure Research Laboratory, University of Science and Technology of China, Hefei 230026

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LIANG Qi, WU Jian-xin, JI Ming-rong et al 1997 Chin. Phys. Lett. 14 793-797

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Abstract We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110) surface. A GaSb (110) sample covered with 10 monolayers Ce was used to adsorb oxygen. When the exposure of O₂ was up to 50L, the oxide of cerium, Ce₂O₃, began to change into unstable CeO₂. The dissociation of CeO₂ resulted in strong oxidation of the substrate. The main products are Ga₂O₃, Sb₂O₃, and then Sb₂O₅. After annealing, a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.

Keywords: 82.65.-i 68.60.Wm

Published: 01 October 1997

PACS:	82.65.-i
	68.60.Wm	(Other nonelectronic physical properties)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I10/0793

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	LIANG Qi
	WU Jian-xin
	JI Ming-rong
	MA Mao-sheng
	LIU Xian-ming
	ZHANG Yu-heng

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