Chin. Phys. Lett.  1997, Vol. 14 Issue (10): 793-797    DOI:
Original Articles |
Photoemission of the Oxidation of Cerium Overlayers on GaSb(110) Surface
LIANG Qi;WU Jian-xin;JI Ming-rong;MA Mao-sheng;LIU Xian-ming;ZHANG Yu-heng
Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
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LIANG Qi, WU Jian-xin, JI Ming-rong et al  1997 Chin. Phys. Lett. 14 793-797
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Abstract We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110) surface. A GaSb (110) sample covered with 10 monolayers Ce was used to adsorb oxygen. When the exposure of O2 was up to 50L, the oxide of cerium, Ce2O3, began to change into unstable CeO2. The dissociation of CeO2 resulted in strong oxidation of the substrate. The main products are Ga2O3, Sb2O3, and then Sb2O5. After annealing, a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.
Keywords: 82.65.-i      68.60.Wm     
Published: 01 October 1997
PACS:  82.65.-i  
  68.60.Wm (Other nonelectronic physical properties)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I10/0793
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LIANG Qi
WU Jian-xin
JI Ming-rong
MA Mao-sheng
LIU Xian-ming
ZHANG Yu-heng
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