Topography of InP Surface Bombarded by O<sup>+</sup><suB>2</suB> Ion Beam

Chin. Phys. Lett.

1997, Vol. 14

Issue (10): 760-763 DOI:

Original Articles

Topography of InP Surface Bombarded by O⁺₂ Ion Beam

SUN Zhao-qi

Department of Physics, Anhui University, Hefei 230039

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SUN Zhao-qi 1997 Chin. Phys. Lett. 14 760-763

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Abstract The topography of InP surface bombarded by O⁺₂ ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion- beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment.

Keywords: 61.80.Jh

Published: 01 October 1997

PACS:

61.80.Jh

(Ion radiation effects)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I10/0760

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