Bound Phonons and Bistability of Donors in Ga<suB>l-x</suB>A1<suB>x</suB>As: Te

Chin. Phys. Lett.

1996, Vol. 13

Issue (6): 461-464 DOI:

Original Articles

Bound Phonons and Bistability of Donors in Ga_l-xA1_xAs: Te

LIAN Shi-yang

Department of Physics, Xiamen University, Xiamen 361005

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LIAN Shi-yang 1996 Chin. Phys. Lett. 13 461-464

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Abstract Bound phonons in Te-doped Ga_l-xA1_xAs were first observed in Raman scattering experiments at low temperature. They are assigned to electrons trapped at an effective-mass-like level. At higher temperatures, this level disappears to the benefit of a stable DX-like deep level. These results reveal a shallow-deep bistable characters of donors in Ga_l-xA1_xAs: Te under some conditions.

Keywords: 71.55.Eq 78.30.Fs

Published: 01 June 1996

PACS:	71.55.Eq	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I6/0461

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