Reactive Deposition Epitaxial Growth of β-FeSi<suB>2</suB> Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction

Chin. Phys. Lett.

1995, Vol. 12

Issue (10): 613-616 DOI:

Original Articles

Reactive Deposition Epitaxial Growth of β-FeSi₂ Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction

WANG Lianwei;LIN Chenglu;SHEN Qinwo;NI Rushan;ZOU Shichang

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050

Cite this article:

WANG Lianwei, LIN Chenglu, SHEN Qinwo et al 1995 Chin. Phys. Lett. 12 613-616

Download: PDF(209KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Reactive deposition epitaxial growth of β-FeSi₂ film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.

Keywords: 68.55.Bd 61.14.-x 68.55.Nq

Published: 01 October 1995

PACS:	68.55.Bd
	61.14.-x
	68.55.Nq	(Composition and phase identification)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I10/0613

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WANG Lianwei
	LIN Chenglu
	SHEN Qinwo
	NI Rushan
	ZOU Shichang

Related articles from Frontiers Journals

[1]	LIU Xing-Long, QIN Fu-Wen, , BIAN Ji-Ming, ZHANG Dong, CHEN Wei-Ji, ZHOU Zhi-Feng, ZHI An-Bo, YU Bo, WU Ai-Min, JIANG Xin, . The Preparation and Characteristics of In_xGa_1−xN (0.06≤x≤0.58) Films Deposited by ECR-PEMOCVD**[J]. Chin. Phys. Lett., 2011, 28(10): 613-616
[2]	LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting, YAN Feng. Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films[J]. Chin. Phys. Lett., 2010, 27(2): 613-616
[3]	FAN Ya-Ming, ZHANG Xing-Wang, YOU Jing-Bi, YING Jie, TAN Hai-Ren, CHEN Nuo-Fu. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)[J]. Chin. Phys. Lett., 2009, 26(5): 613-616
[4]	XIAO Qi-Ling, SHAO Shu-Ying, HE Hong-Bo, SHAO Jian-Da, FAN Zheng-Xiu. Influence of Ytterbia Content on Residual Stress and Microstructure of Y₂O₃--ZrO₂ Thin Films Prepared by EB-PVD[J]. Chin. Phys. Lett., 2008, 25(9): 613-616
[5]	ZHAN Chang-Yong, WANG Li-Wu, HUANG Ning-Kang. Effect of Bias on Content of GeC in Ge _1-x C_x Films[J]. Chin. Phys. Lett., 2007, 24(3): 613-616
[6]	XU Chuan-Ming, SUN Yun, LI Feng-Yan, ZHANG Li, XUE Yu-Ming, HE Qing, LIU Hong-Tu. Nonlinear Shift of the Raman A₁ Mode in Ga-Incorporated CuInSe₂ Thin Films[J]. Chin. Phys. Lett., 2006, 23(4): 613-616
[7]	ZENG Song-Jun, YANG Qi-Bin, CAI Can-Ying, LIU Hong-Rong. A One-Dimensional Method for Calculating the Exit Wavefunction[J]. Chin. Phys. Lett., 2006, 23(2): 613-616
[8]	ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De. A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys[J]. Chin. Phys. Lett., 2005, 22(8): 613-616
[9]	LIU Li-Hua, LI Ying-Ai, FENG Wei, LI Wei-Qing, ZHAO Chun-Hong, WANG Yu-Xin, ZHAO Yong-Nian. A New Method to Prepare Boron Nitride Thin Films[J]. Chin. Phys. Lett., 2005, 22(5): 613-616
[10]	CAO Yang, SUN Jia-Lin, ZHANG Guo-Sheng, GUO Ji-Hua, WANG Zheng-Ping. Absorption Spectra and Ionic Conductivity of Rb_xCs_1-xAg₄I₅ Superionic Conductors Thin Films[J]. Chin. Phys. Lett., 2005, 22(1): 613-616
[11]	LIU Yuan-Fu, HAN Jian-Min, ZHANG Gu-Ling, WANG Jiu-Li, LI Min, YANG Wu-Bao, LIU Chi-Zi, LI Hui-Qi, YANG Si-Ze. Microstructure and Wear Resistance of Plasma Jet Clad Ti₅Si₃/NiTi Composite Coating[J]. Chin. Phys. Lett., 2004, 21(7): 613-616
[12]	LIN Xuan-Ying, HUANG Chuang-Jun, LIN Kui-Xun, YU Yun-Peng, YU Chu-Ying, CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films by SiCl₄/H₂ rf Plasma Enhanced Chemical Vapor Deposition [J]. Chin. Phys. Lett., 2003, 20(10): 613-616
[13]	SUN Jia-Lin, TIAN Guang-Yan, CAO Yang, SHI Shuo, TAN Xiao-Jing, CHEN Tao. Phase Transition and Temperature Dependence of the A₁ Low-Frequency Exciton Band Parameters in Quaternary Compound Rb_0.5Cs_0.5Ag₄I₅ Thin Films[J]. Chin. Phys. Lett., 2002, 19(9): 613-616
[14]	PAN Zhong, LI Lian-He, XU Ying-Qiang, ZHANG Wei, LIN Yao-Wang, ZHANG Rui-Kang, ZHONG Yuan, REN Xiao-Min. GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 μm[J]. Chin. Phys. Lett., 2001, 18(9): 613-616
[15]	PAN Zhong, LI Lian-He, DU Yun, LIN Yao-Wang, WU Rong-Han. High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2001, 18(5): 613-616

Viewed

Full text

Abstract