Electroreflectance Study of Strained Layer Ge<suB>x</suB>Si<suB>l-x</suB>/Si Multiple Quantum Wells

Chin. Phys. Lett.

1994, Vol. 11

Issue (2): 119-122 DOI:

Original Articles

Electroreflectance Study of Strained Layer Ge_xSi_l-x/Si Multiple Quantum Wells

PAN Shihong;HUANG Shuo;CHEN Wei;ZHANG Cunzhou;SHENG Chi^*;WANG Xun^*

Department of Physics, Nankai University, Tianjin 300071 ^*Surface Physics Laboratory, Fudan University, Shanghai 200433

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PAN Shihong, HUANG Shuo, CHEN Wei et al 1994 Chin. Phys. Lett. 11 119-122

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Abstract A set of strained-layer Ge_xSi_l-x/Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E₀, E₁, as well as E₀¹. The transitions of E₀ and E₀¹, which are very weak in the bulk material, are apparently enhanced in quantum wells.

Keywords: 73.40.Lq 78.65.Fa

Published: 01 February 1994

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	78.65.Fa

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I2/0119

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	PAN Shihong
	HUANG Shuo
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