Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells

Chin. Phys. Lett.

1993, Vol. 10

Issue (7): 433-436 DOI:

Original Articles

Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells

XU Shijie^1,2;JIANG Desheng¹;LI Guohua¹;ZHANG Yaohui¹;LUO Jinsheng²

¹National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Acadcniia Sinica. Beijing 100083 ²Department of Electronic Engineering, Xi’an Jiaotong University, Xi’an 710049

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XU Shijie, JIANG Desheng, LI Guohua et al 1993 Chin. Phys. Lett. 10 433-436

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Abstract We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_0.35 Ga_0.65As/GaAs (50/40/100Å) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5meV.

Keywords: 78.55.-m 71.35.+z

Published: 01 July 1993

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	71.35.+z

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I7/0433

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	XU Shijie
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