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Trap Behaviors of Constant Electric Field Stressing in Thin Oxynitride and Re-oxidized Oxynitride Films |
| YANG Bingliang (B. L. Yang);LIU Baiyong (B. Y. Liu);H. Wong*;Y. C. Cheng* |
| Department of Applied Physics, South China University of Technology, Guangzhou 510641
*Department of Electronic Engineering City Polytechnic of
Hong Kong Tat Chee Avenue, Kowloon, Hong Kong
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| Cite this article: |
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YANG Bingliang (B. L. Yang), LIU Baiyong (B. Y. Liu), H. Wong et al 1992 Chin. Phys. Lett. 9 479-482 |
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Abstract The behaviors of constant electric field stressing of the thin (200Å) oxynitride and re-oxidized oxynitride films are investigated. The flat-band shift is not a simple function of the stressing field. The observed phenomena are attributed to the significance of trap filling, electronic tunneling and trap generation at different stressing field strengths. Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.
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| Keywords:
73.60.Hy
73.50.Gr
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Published: 01 September 1992
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| PACS: |
73.60.Hy
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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