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Power Dependence of the Recombination Processes in the InxGa1-xAs/GaAs Single Quantum Well |
| QIAN Shixiong;WU Jianyao;YUAN Shu;LI Yufen;Thorwald G. Andersson1;CHEN Zonggui2;PENG Wenji3;SHE Weilong3;YU Zhenxin3 |
| Department of Physics, Fudan University, Shanghai 200433
1Department of Physics, Chalmers University of Technology, Goteborg, Sweden
2Institute of Semiconductor, Academia Sinica, Beijing 100083
3Institute of Laser Spectroscopy, Zhongshan University, Guangzhou 510275 |
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| Cite this article: |
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QIAN Shixiong, WU Jianyao, YUAN Shu et al 1991 Chin. Phys. Lett. 8 428-431 |
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Abstract We have measured the power dependence of the photoluminesence spectra from a set of strained InxGa1-xAs/GaAs single quantum wells. The result shows that the excitation power has important effect on the carrier recombination processes. When the power increases from 0.5 to 14mW, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. At high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.
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| Keywords:
78.55.Cr
78. 65.Fa
73.50.Gr
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Published: 01 August 1991
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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78. 65.Fa
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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