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STUDY OF THE PROPERTIES OF INFRARED INTERSUBBAND
TRANSITION IN DOPED GaAs/A1xGa1-xAs MULTIPLE QUANTUM WELLS
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| CHEN Zhenghao;CUI Dafu;ZHOU Junming;PAN Shaohua;HUANG Qi,
ZHOU Yueliang;LÜ Huibin;XIE Yuanlin;FENG Simin;YANG Guozhen*
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| Institute of Physics, Academia Sinica, Beijing 100080
*CCAST (World Laboratory)
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| Cite this article: |
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CHEN Zhenghao, CUI Dafu, ZHOU Junming et al 1990 Chin. Phys. Lett. 7 319-322 |
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Abstract The properties of intersubband transition of GaAs/A1xGa1-xAs multiple quantum wells with various well widths and doped-well concentrations have been studied. Both theoretical and experimental results are in good agreement. For the appropriate well width and higher doping concentration, we directly observed two intersubband absorption peaks from E1 →E2 and E2→ E3 transitions in well. The experimental results and theoretical analysis are given.
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| Keywords:
79.40.Lq
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Published: 01 July 1990
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