EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM

Chin. Phys. Lett.

1990, Vol. 7

Issue (11): 518-521 DOI:

Original Articles

EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM

HE Yuliang;YU Bin;LIU Xiangna

Department of Physics, Nanjing University, Nanjing 210008

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HE Yuliang, YU Bin, LIU Xiangna 1990 Chin. Phys. Lett. 7 518-521

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Abstract We studied the effect of nitrogen content in a-SaN_x:H barrier layers to a-Si:H/a-SiN_x:H mutilayers with different thickness of a-Si:H well layers. It was shown that, except quantum well effect, the ratio of N/Si and interfacial defects of multilayers have influence on the conduction mechanism. The activation energy of mobility ΔE is equal to 0.17±0.03eV which is attributed to the interfacial scattering.

Keywords: 72.80.Ng 68.65.+g 72.20.-i

Published: 01 November 1990

PACS:	72.80.Ng	(Disordered solids)
	68.65.+g
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I11/0518

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