PHOTOLUMINESCENCE STUDIES OF In<suB>0.25</suB>Ga<suB>0.75</suB>As-GaAs STRAINED QUANTUM WELLS UNDER HIGH PRESSURE

Chin. Phys. Lett.

1989, Vol. 6

Issue (2): 76-79 DOI:

Original Articles

PHOTOLUMINESCENCE STUDIES OF In_0.25Ga_0.75As-GaAs STRAINED QUANTUM WELLS UNDER HIGH PRESSURE

WANG Lijun;HOU Hongqi;ZHOU Junming;TANG Ruming;LU Zhidong;WANG Yanyun;HUANG Qi

Institute of Physics, Academia Sinica, Beijing

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WANG Lijun, HOU Hongqi, ZHOU Junming et al 1989 Chin. Phys. Lett. 6 76-79

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Abstract We report the results of the photoluminescence (PL) studies of the In_0.25Ga_0.75As-GaAs strained quantum wells (QW's) at 77K and at high pressures up to 50kbar. The pressure coefficients of the X valley of (InGa)As-GaAs strained QW's are presented for the first time. The crossover between the energy level in the well and the X valley in the barrier GaAs has been observed. The ratio of the conduction band offset to valence band offset in In_0.25Ga_0.75As-GaAs heterojunction was determined to be Q_c=ΔE_c :ΔE_v =0.68:0.32. Some discussions about GaAS – Al_0.3Ga_0.7 As QW's are also presented.

Keywords: 6155H 7855H

Published: 01 February 1989

PACS:	6155H
	7855H

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I2/076

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	WANG Lijun
	HOU Hongqi
	ZHOU Junming
	TANG Ruming
	LU Zhidong
	WANG Yanyun
	HUANG Qi

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