CHARACTERIZATION OF Si-SiO<suB>2</suB> INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

Chin. Phys. Lett.

1989, Vol. 6

Issue (12): 545-548 DOI:

Original Articles

CHARACTERIZATION OF Si-SiO₂ INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

LU Liwu*;G.Groesendken;C.Hasenack

*Institute of Semiconductors, Academia Sinica, Beijing, 100083 IMEC, Kapeldreef 75, B-3030 Leuven, Belgium

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LU Liwu, G.Groesendken, C.Hasenack 1989 Chin. Phys. Lett. 6 545-548

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Abstract The D_it (interface states density) in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS (Deep Level Transient Spectroscopy) technique. It is found that the strong dependence of the D_it on POHT (Preoxidation Heat Treatment) and starting oxygen content of substrates is expected. The DLTS technique can detects the presence of bulk defect (E_t-E_v=0.29eV) at the interface presumably due to chlorine species.

Keywords: 73.40.Qv

Published: 01 December 1989

PACS:

73.40.Qv

(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I12/0545

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	LU Liwu
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