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DEEP TRAPS IN a-Si:H MEASURED BY INFRARED STIMULATED CURRENT |
| LI Wei;HAN Daxing |
| Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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LI Wei, HAN Daxing 1988 Chin. Phys. Lett. 5 393-396 |
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Abstract Silicon dangling bond(DB) is widely accepted as recombination center in a-Si:H. This is true at room temperature. We measured the Infrared Stimulated Current(IRSC) in the temperature range of 86-260K. and focused on the PC onset overshoot for both undoped and P-doped samples. The results show that DB also acts as electron trap, especially at low temperature.
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| Keywords:
7280N
7220J
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Published: 01 September 1988
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