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HOT-CARRIER ENERGY-TRANSFER RATE IN GaAs-AlGaAs HETEROSTRUCTURES |
| LEI Xiaolin |
| Shanghai Institute of Metallurgy, Academia Sinica, Shanghai |
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| Cite this article: |
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LEI Xiaolin 1987 Chin. Phys. Lett. 4 193-196 |
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Abstract Hot-carrier energy-transfer rates in GaAs-AlGaAs single and multiple heterostructures are studied based on a balance-equation approach recently developed. The electron temperature is almost a universal function of the energy-transfer rate per carrier, irrespective of the system geometry, electron density and impurity scattering, and that in the case of optic phonon scattering, the dynamic and high-field effects eliminate most of the screening.
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Published: 01 May 1987
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