AMORPHOUS PHASE FORMATION OF Mo1-xGex, Mo1-xSix, FILMS AND THEIR SUPERCONDUCTING PROPERTIES

Chin. Phys. Lett.

1984, Vol. 1

Issue (1): 23-26 DOI:

Original Articles

AMORPHOUS PHASE FORMATION OF Mo_1-xGe_x, Mo_1-xSi_x, FILMS AND THEIR SUPERCONDUCTING PROPERTIES

ZHAO Zhong-xian;MENG Ru-ling;ZHOU Ping;LI Lin

The Institute of Physics, Academia Sinica

Cite this article:

ZHAO Zhong-xian, MENG Ru-ling, ZHOU Ping et al 1984 Chin. Phys. Lett. 1 23-26

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Abstract Mo_1-xGe_x, Mo_1-xSi_x, films were prepared by getter sputtering onto liquid nitrogen cooled substrates. The amorphous phase formations were Ge > 22 at . % , Si > 18 at .% respectively. With the increase of Ge, Si content, Tc decreased from 6 to 3K in the amorphous state. The measured results of (dB_c2/dT)T_c , J_c and ρ( 300K) /ρ(8K) indicated that the four chosen Mo_1-xSi_x films exhibit fundamental characteristics of amorphous superconductors.

Published: 30 June 1984

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1984/V1/I1/023

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