| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes |
| Xue-Hui Tao**, Yong Yang |
Department of Signal and Control Engineering, Soochow University, Suzhou 215000
|
|
|
|
|
|
Abstract The photometric characteristics of high-power white light-emitting diode (LED) devices are investigated. A theoretical model for the luminous efficacy of high-power white LED devices and LED systems is proposed. With the proposed theoretical model, the mechanism of the luminous efficacy decrease is explained. Meanwhile, the model can be used to estimate the luminous efficacy of LEDs under general operation conditions, such as different operation temperatures and injection currents. The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs. The experimental results demonstrate a high estimation accuracy. The proposed models not only can be applied to estimate the LED photometric performance, but also is helpful for reliability research of LEDs.
|
|
|
Received: 29 November 2016
Published: 14 March 2017
|
|
| PACS: |
85.60.Jb
|
(Light-emitting devices)
|
| |
85.60.Bt
|
(Optoelectronic device characterization, design, and modeling)
|
| |
02.30.Cj
|
(Measure and integration)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 51307113 and 51407124, and the Natural Science Foundation of Jiangsu Province under Grant No BK20130307. |
|
|
|
Issue Date: 14 March 2017
|
|
| [1] | Chiu H J, Lo Y K, Lee T P, Mou S C and Huang H M 2009 IEEE Trans. Ind. Electron. 56 2793 | | [2] | Lv X, Loo K H, Lai Y M and Tse C K 2014 IEEE Trans. Ind. Electron. 61 4665 | | [3] | Chiu H J, Lo Y K, Chen J T, Cheng S J, Lin C Y and Mou S C 2010 IEEE Trans. Ind. Electron. 57 735 | | [4] | Arik M, Petroski J and Weaver S 2002 IEEE 8th Intersoc. Conf. Thermal Thermomech. Phenomena Electron. Syst. (Orlando, Florida 28–31 May 2008) p 113 | | [5] | Osvald J, Kuzmik J, Konstantinidis G, Lobotka P and Georgakilas A 2005 Microelectronic Eng. 81 181 | | [6] | Tan S C 2010 IEEE Trans. Ind. Electron. 57 1342 | | [7] | Biber C 2008 IEEE Semicond. Therm. Meas. Manage. Symp. (San Jose, California 16–20 March 2008) p 180 | | [8] | Yu Y J, Zhang F H and Ni J J 2014 IEEE Trans. Ind. Electron. 61 2423 | | [9] | Kim M H, Schubert M F, Dai Q, Kim J K and Schubert E F 2007 Appl. Phys. Lett. 91 183507 | | [10] | Ling S C, Lu T C, Chang S P, Chen J R, Kou H C and Wang S C 2010 Appl. Phys. Lett. 96 231101 | | [11] | Yang Y, Cao X A and Yan C 2008 IEEE Trans. Electron. Devices 55 1771 | | [12] | Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101 | | [13] | Kim A Y, Götz W, Seigerwald D A, Wierer J J, Gardner N F, Sun J, Stockman S A, Martin P S, Krames M R, Kern R S and Steranka F M 2001 Phys. Status Solidi A 188 15 | | [14] | Akita K, Kyono T, Yoshizumi Y, Kitabayashi H and Katayama K 2007 J. Appl. Phys. 101 033104 | | [15] | Efremov A A, Bochkareva N I, Gorbunov R I, Larinovich D A and Shreter Yu G 2006 Phys. Semicond. Devices 40 605 | | [16] | Rozhansky V and Zakheim D A 2006 Phys. Status Solidi C 3 2160 | | [17] | Rozhansky V and Zakheim D A 2007 Phys. Status Solidi A 204 227 | | [18] | Krames M R, Shchekin O B, Mueller-Mach R and Craford M G 2007 J. Display Technol. 3 160 | | [19] | Mukai T, Yamada M and Nakamura S 1999 Jpn. J. Appl. Phys. 38 3976 | | [20] | Schubert E F 2006 Light-Emitting Diodes 2nd edn (Cambridge: Cambridge University Press) chap 5 p 98 | | [21] | Hui S Y R and Qin Y X 2009 IEEE Trans. Power Electron. 24 1967 | | [22] | Cai J X, Sun H Q, Zheng H, Zhang P J and Guo Z Y 2014 Chin. Phys. B 23 058502 | | [23] | Liu W, Zhao D G, Jiang D S, Chen P, Liu Z S et al 2015 Chin. Phys. B 24 127801 | | [24] | Zhao Y K, Li Y F, Yun F et al 2015 Chin. Phys. B 24 056806 | | [25] | Zhou X J, Zhang J, Li S T et al 2014 Chin. Phys. B 23 068502 | | [26] | Rajabi K, Cao W Y, Hu X D et al 2015 Chin. Phys. Lett. 32 027802 | | [27] | Chen H T, Tao X H and Hui S Y R 2012 IEEE Trans. Power Electron. 27 2176 | | [28] | Farkas G, Vader Q V V, Poppe A and Bogn'ar G 2005 IEEE Trans. Compon. Packag. Technol. 28 45 | | [29] | Sz'ekely V, Poppe A, Rencz M, Rosental M and Tesz'eri T 2000 Microelectron. Rel. 40 517 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
