Performance Improvement of GaN-Based Violet Laser Diodes

doi:10.1088/0256-307X/34/1/017101

Chin. Phys. Lett.

2017, Vol. 34

Issue (1): 017101 DOI: 10.1088/0256-307X/34/1/017101

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Performance Improvement of GaN-Based Violet Laser Diodes

De-Gang Zhao^1,2**, De-Sheng Jiang¹, Ling-Cong Le¹, Jing Yang¹, Ping Chen¹, Zong-Shun Liu¹, Jian-Jun Zhu¹, Li-Qun Zhang³

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
²University of Chinese Academy of Sciences, Beijing 100049
³Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123

Cite this article:

De-Gang Zhao, De-Sheng Jiang, Ling-Cong Le et al 2017 Chin. Phys. Lett. 34 017101

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Abstract The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.

Received: 13 October 2016 Published: 29 December 2016

PACS:	71.20.Nr	(Semiconductor compounds)
	71.55.Eq	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)

Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0401801, the National Natural Science Foundation of China under Grant Nos 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, and 61223005, and the One Hundred Person Project of the Chinese Academy of Sciences.

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https://cpl.iphy.ac.cn/10.1088/0256-307X/34/1/017101 OR https://cpl.iphy.ac.cn/Y2017/V34/I1/017101

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	De-Gang Zhao
	De-Sheng Jiang
	Ling-Cong Le
	Jing Yang
	Ping Chen
	Zong-Shun Liu
	Jian-Jun Zhu
	Li-Qun Zhang

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