| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Orbit-Transfer Torque Driven Field-Free Switching of Perpendicular Magnetization |
| Xing-Guo Ye†, Peng-Fei Zhu†, Wen-Zheng Xu†, Nianze Shang, Kaihui Liu, and Zhi-Min Liao* |
| State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China |
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| Cite this article: |
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Xing-Guo Ye, Peng-Fei Zhu, Wen-Zheng Xu et al 2022 Chin. Phys. Lett. 39 037303 |
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Abstract The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory. Although the spin-transfer torque and spin-orbit torque technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torque (OTT), that is, exerting torque on the magnetization using the orbital magnetic moments, and thus demonstrate a new strategy for current-driven PM reversal without external magnetic field. The perpendicular polarization of orbital magnetic moments is generated by a direct current in a few-layer WTe$_{2}$ due to the existence of nonzero Berry curvature dipole, and the polarization direction can be switched by changing the current polarity. Guided by this principle, we construct the WTe$_{2}$/Fe$_{3}$GeTe$_{2}$ heterostructures to achieve the OTT driven field-free deterministic switching of PM.
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Received: 11 February 2022
Express Letter
Published: 16 February 2022
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| PACS: |
73.63.-b
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(Electronic transport in nanoscale materials and structures)
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75.25.Dk
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(Orbital, charge, and other orders, including coupling of these orders)
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85.75.Bb
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(Magnetic memory using giant magnetoresistance)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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