Chin. Phys. Lett.  2021, Vol. 38 Issue (3): 036301    DOI: 10.1088/0256-307X/38/3/036301
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Quantum Transport across Amorphous-Crystalline Interfaces in Tunnel Oxide Passivated Contact Solar Cells: Direct versus Defect-Assisted Tunneling
Feng Li1,2*, Weiyuan Duan2, Manuel Pomaska2, Malte Köhler2, Kaining Ding2, Yong Pu1*, Urs Aeberhard2, and Uwe Rau2
1College of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2IEK-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Feng Li, Weiyuan Duan, Manuel Pomaska et al  2021 Chin. Phys. Lett. 38 036301
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Abstract Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon solar cell concepts of the past decade, achieving a record efficiency of 25%. We study the transport mechanisms of realistic tunnel oxide structures, as encountered in tunnel oxide passivating contact (TOPCon) solar cells. Tunneling transport is affected by various factors, including oxide layer thickness, hydrogen passivation, and oxygen vacancies. When the thickness of the tunnel oxide layer increases, a faster decline of conductivity is obtained computationally than that observed experimentally. Direct tunneling seems not to explain the transport characteristics of tunnel oxide contacts. Indeed, it can be shown that recombination of multiple oxygen defects in $a$-SiO$_{x}$ can generate atomic silicon nanowires in the tunnel layer. Accordingly, new and energetically favorable transmission channels are generated, which dramatically increase the total current, and could provide an explanation for our experimental results. Our work proves that hydrogenated silicon oxide (SiO$_{x}$:H) facilitates high-quality passivation, and features good electrical conductivity, making it a promising hydrogenation material for TOPCon solar cells. By carefully selecting the experimental conditions for tuning the SiO$_{x}$:H layer, we anticipate the simultaneous achievement of high open-circuit voltage and low contact resistance.
Received: 24 October 2020      Published: 02 March 2021
PACS:  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  
  75.85.+t (Magnetoelectric effects, multiferroics)  
  77.55.Nv (Multiferroic/magnetoelectric films)  
  78.20.-e (Optical properties of bulk materials and thin films)  
Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 61704083 and 61874060), the Natural Science Foundation of Jiangsu Province (Grant No. BK20181388), and NUPTSF (Grant No. NY219030).
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https://cpl.iphy.ac.cn/10.1088/0256-307X/38/3/036301       OR      https://cpl.iphy.ac.cn/Y2021/V38/I3/036301
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Articles by authors
Feng Li
Weiyuan Duan
Manuel Pomaska
Malte Köhler
Kaining Ding
Yong Pu
Urs Aeberhard
and Uwe Rau
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