| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
A New Effect of Oxygen Plasma on Two-Dimensional Field-Effect Transistors: Plasma Induced Ion Gating and Synaptic Behavior |
| Cheng-Lei Guo1,2,3, Bin-Bin Wang2, Wei Xia2, Yan-Feng Guo2, Jia-Min Xue2** |
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210
3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049
|
|
| Cite this article: |
|
Cheng-Lei Guo, Bin-Bin Wang, Wei Xia et al 2019 Chin. Phys. Lett. 36 078501 |
|
|
|
|
Abstract Plasma treatment is a powerful tool to tune the properties of two-dimensional materials. Previous studies have utilized various plasma treatments on two-dimensional materials. We find a new effect of plasma treatment. After controlled oxygen-plasma treatment on field-effect transistors based on two-dimensional SnSe$_{2}$, the capacitive coupling between the silicon back gate and the channel through the 300 nm SiO$_{2}$ dielectric can be dramatically enhanced by about two orders of magnitude (from 11 nF/cm$^{2}$ to 880 nF/cm$^{2}$), reaching good efficiency of ion-liquid gating. At the same time, plasma treated devices show large hysteresis in the gate sweep demonstrating memory behavior. We reveal that this spontaneous ion gating and hysteresis are achieved with the assistance of a thin layer of water film automatically formed on the sample surface with water molecules from the ambient air, due to the change in hydrophilicity of the plasma treated samples. The water film acts as the ion liquid to couple the back gate and the channel. Thanks to the rich carrier dynamics in plasma-treated two-dimensional transistors, synaptic functions are realized to demonstrate short- and long-term memories in a single device. This work provides a new perspective on the effects of plasma treatment and a facile route for realizing neuromorphic devices.
|
|
|
Received: 12 February 2019
Published: 20 June 2019
|
|
| PACS: |
85.30.Tv
|
(Field effect devices)
|
| |
52.77.-j
|
(Plasma applications)
|
| |
73.50.-h
|
(Electronic transport phenomena in thin films)
|
|
|
| Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFA0305400, the ShanghaiTech University, and the Natural Science Foundation of Shanghai under Grant No 17ZR1443300. |
|
|
|
| [1] | He D, Zhang Y, Wu Q et al 2014 Nat. Commun. 5 5162 | | [2] | Zhang W L 2019 Chin. Phys. Lett. 36 067301 | | [3] | Xiang D, Han C, Wu J et al 2015 Nat. Commun. 6 6485 | | [4] | Chen M, Nam H, Wi S et al 2013 Appl. Phys. Lett. 103 142110 | | [5] | Han C, Hu Z, Gomes L C et al 2017 Nano Lett. 17 4122 | | [6] | Liu Y L, Nan H Y, Wu X et al 2013 ACS Nano 7 4202 | | [7] | Shim J, Oh A, Kang D H et al 2016 Adv. Mater. 28 6985 | | [8] | Jia J, Jang S K, Lai S et al 2015 ACS Nano 9 8729 | | [9] | Zhu J Q, Wang Z C, Yu H et al 2017 J. Am. Chem. Soc. 139 10216 | | [10] | Pei J J, Gai X, Yang J et al 2016 Nat. Commun. 7 10450 | | [11] | Pei T, Bao L, Wang G et al 2016 Appl. Phys. Lett. 108 053506 | | [12] | Guo C L, Tian Z, Xiao Y J et al 2016 Appl. Phys. Lett. 109 203104 | | [13] | Tosun M, Chan L, Amani M et al 2016 ACS Nano 10 6853 | | [14] | Choudhary N, Islam M R, Kang N et al 2016 J. Phys.: Condens. Matter 28 364002 | | [15] | Islam M R, Kang N, Bhanu U et al 2014 Nanoscale 6 10033 | | [16] | Lioi D B, Gosztola D J, Wiederrecht G P et al 2017 Appl. Phys. Lett. 110 081901 | | [17] | Kim B J, Jang H, Lee S K et al 2010 Nano Lett. 10 3464 | | [18] | Pu J, Yomogida Y, Liu K K et al 2012 Nano Lett. 12 4013 | | [19] | Perera M M, Lin M W, Chuang H J et al 2013 ACS Nano 7 4449 | | [20] | Zhao S Y F, Elbaz G A, Bediako D K et al 2018 Nano Lett. 18 460 | | [21] | Ji H, Wei J and Natelson D 2012 Nano Lett. 12 2988 | | [22] | Panzer M J, Newman C R and Frisbie C D 2005 Appl. Phys. Lett. 86 103503 | | [23] | Huang Y, Sutter E, Wu L M et al 2018 ACS Appl. Mater. Interfaces 10 23198 | | [24] | Smith A J, Owens S and Forsythe I D 2000 J. Physiol. 529 681 | | [25] | Zhu L Q, Wan C J, Guo L Q et al 2014 Nat. Commun. 5 3158 | | [26] | Chang T, Jo S H and Lu W 2011 ACS Nano 5 7669 | | [27] | Sturman B, Podivilov E and Gorkunov M 2003 Phys. Rev. Lett. 91 176602 | | [28] | Gerrow K and Triller A 2010 Curr. Opin. Neurobiol. 20 631 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
