| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive |
| Jian-Kang Wang1,2,3, Shang-Sheng Li1,2,3**, Ning Wang1, Hui-Jie Liu1, Tai-Chao Su1,2,3, Mei-Hua Hu1,2, Fei Han1,2,3, Kun-Peng Yu1,2,3, Hong-An Ma4 |
1School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000
2Engineering Technology Research Center of Jiaozuo City for Advanced Functional Materials Preparation under High Pressure, Jiaozuo 454000
3Henan Joint International Research Laboratory for High Performance Metallic Material and Their Numerical Simulation, Jiaozuo 454000
4State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012
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| Cite this article: |
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Jian-Kang Wang, Shang-Sheng Li, Ning Wang et al 2019 Chin. Phys. Lett. 36 046101 |
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Abstract Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280$^{\circ}\!$C to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy (FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally, the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors.
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Received: 23 January 2019
Published: 23 March 2019
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| PACS: |
61.72.S-
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(Impurities in crystals)
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61.72.U-
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(Doping and impurity implantation)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 51772120, the Natural Science Foundation of Henan Province under Grant No 182300410279, the Project for Key Science and Technology Research of Henan Province under Grant No 182102210311, the Program for Innovative Research Team in Science and Technology in the University of Henan Province under Grant No 19IRTSTHN027, and the Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University under Grant No 2016YJD03. |
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